Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2

Title
Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2
Authors
이수연황도경이영택박성곤이규형김성웅이기문
Keywords
2D materials; 2D transport; atomic doping
Issue Date
2018-04
Publisher
Advanced electronic materials
Citation
VOL 4, NO 4-1700563-6
Abstract
Substitutional atomic doping is one of the most convenient and precise routes to modulate semiconducting material properties. Although two-dimensional (2D) layered transition metal dichalcogenides (TMDs) are of great interest as a prominent semiconducting material due to their unique physical/chemical properties, such a practical atomic doping is still rare, possibly due to the intrinsic localization nature of conduction paths based on d-band states. Here, using single-crystalline Cl-doped SnSe2, the dimensional crossover in carrier transport accompanied by semiconductor-to-metal transition is reported. Nondoped SnSe2 shows semiconducting transport behavior dominated by 2D variable range hopping conduction, exhibiting relatively strong localization of carriers at low-temperature regions. Moderately electron-doped SnSe2 by substitution on Se with higher valent Cl exhibits superior electrical conductivity even than the heavily doped one owing to the higher electron mobility of the former (167 cm2 V− 1 s− 1 at 2 K). Combined with Raman spectra, temperature dependence of mobility clearly evidences the effective screening of homopolar optical mode phonon compared to typical TMD materials. Detailed characterizations with magnetoresistance behaviors finally demonstrate that the suppression of both homopolar optical mode phonon and carrier localization as retaining low-dimensionality is key for high mobility conduction in electrondoped SnSe2.
URI
http://pubs.kist.re.kr/handle/201004/67402
ISSN
2199-160X
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KIST Publication > Article
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