Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates
- Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates
- 원성옥; 김형준; 김상현; 이병현; 김성광; 김한성; 주건우; 심재필
- Epitaxial growth; III-V compound semiconductor; Cross-hatch array; Preferential surface diffusion; Microcrack; Anisotropic strain relaxation
- Issue Date
- Thin solid films
- VOL 649-42
- The anisotropic surface morphology of a tensile-strained In0.42Al0.58As layer grown on an InP(100) substrate was investigated by means of observing the cross-hatch patterns between two orthogonal in-plane directions:  and View the MathML source. Analysis results using atomic force microscopy evidently reveal a higher array density along direction , with an asymmetrically sharp ridge across each array. Conversely, there was a much lower array density along direction View the MathML source and a symmetrically big mound-like ridges. Our X-ray diffraction and energy-dispersive spectroscopy analyses showed a more substantial amount of strain relaxation along direction View the MathML source due to preferential indium incorporation along . As a result, the big mound ridges over the arrays along direction View the MathML source were believed to be the result of local indium accumulation. Additionally, microcrack formations, penetrating into substrates, were exclusively formed on top of the mound ridges with central depressions along direction View the MathML source, presumably causing additional anisotropic strain relaxation.
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