Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates

Title
Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates
Authors
원성옥김형준김상현이병현김성광김한성주건우심재필
Keywords
Epitaxial growth; III-V compound semiconductor; Cross-hatch array; Preferential surface diffusion; Microcrack; Anisotropic strain relaxation
Issue Date
2018-03
Publisher
Thin solid films
Citation
VOL 649-42
Abstract
The anisotropic surface morphology of a tensile-strained In0.42Al0.58As layer grown on an InP(100) substrate was investigated by means of observing the cross-hatch patterns between two orthogonal in-plane directions: [011] and View the MathML source. Analysis results using atomic force microscopy evidently reveal a higher array density along direction [011], with an asymmetrically sharp ridge across each array. Conversely, there was a much lower array density along direction View the MathML source and a symmetrically big mound-like ridges. Our X-ray diffraction and energy-dispersive spectroscopy analyses showed a more substantial amount of strain relaxation along direction View the MathML source due to preferential indium incorporation along [011]. As a result, the big mound ridges over the arrays along direction View the MathML source were believed to be the result of local indium accumulation. Additionally, microcrack formations, penetrating into substrates, were exclusively formed on top of the mound ridges with central depressions along direction View the MathML source, presumably causing additional anisotropic strain relaxation.
URI
http://pubs.kist.re.kr/handle/201004/67404
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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