Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Title
Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering
Authors
민병권황윤정오형석박기순추 반 벤김병우김동욱
Keywords
CIGS; thin film solar cells; solution process; interface
Issue Date
2018-03
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 10, NO 12-9899
Abstract
An optimization of band alignment at the p– n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel “3-step chalcogenization process” for Cu2– xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable “spike” type conduction band alignment instead of “cliff” type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J– V– T analysis.
URI
http://pubs.kist.re.kr/handle/201004/67455
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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