Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Title
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Authors
이상윤Roland NagyMatthias WidmannMatthias NiethammerDurga B. R. DasariIlja GerhardtOney O. SoykalMarina RadulaskiTakeshi OhshimaJelena VuckovicNguyen Tien SonIvan G. IvanovSophia E. EconomouCristian BonatoJorg Wrachtrup
Issue Date
2018-03
Publisher
Physical Review Applied
Citation
VOL 9, NO 3-034022-8
Abstract
Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control.We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100%increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
URI
http://pubs.kist.re.kr/handle/201004/67530
ISSN
2331-7019
Appears in Collections:
KIST Publication > Article
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