Low Temperature Material Stacking of Ultra-Thin Body Ge (110)-on-insulator Structure via Wafer Bonding and Epitaxial Lift-off from III-V Templates

Title
Low Temperature Material Stacking of Ultra-Thin Body Ge (110)-on-insulator Structure via Wafer Bonding and Epitaxial Lift-off from III-V Templates
Authors
김형준김상현한재훈심재필주건우김성광김한성임형락
Issue Date
2018-03
Publisher
IEEE transactions on electron devices
Citation
VOL 65, NO 3-1257
Abstract
In this brief, we fabricated Ge (110)-on-insulator (-OI) structures on Si substrates viawafer bonding and epitaxial lift-off (ELO) process using Ge layer grown on GaAs for low-temperature layer stacking toward monolithic 3-D integration. We also systematically investigated the lateral etching behaviors of AlAs, which was used as a sacrificial layer in the ELO process, on GaAs (110) substrates. Fabricated Ge (110)-OI was analyzed by surface atomic force microscopy, X-ray diffraction, Raman shift, and transmission electron microscope analyses. We found that the 40-nm-thick ultrathin-body Ge (110)-OI has very high crystal quality, indicating our Ge stacking process is very stable.
URI
http://pubs.kist.re.kr/handle/201004/67590
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE