Impact of Ground Plane Doping and BottomGate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel

Title
Impact of Ground Plane Doping and BottomGate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
Authors
최원준송진동김형준김상현심재필김성광김한성금대명Jaewon KimChang Zoo KimSung Jin ChoiDae Hwan KimDong Myong Kim
Issue Date
2018-05
Publisher
IEEE transactions on electron devices
Citation
VOL 65, NO 5-1868
Abstract
In this paper, we fabricated In0.53Ga0.47As-on insulator (OI) MOSFETs on Si substrates with different doping types to mimic ground plane doping using direct wafer bonding and epitaxial lift-off (ELO) techniques. We investigated the impact of doping types on the ground plane and the backgate biasing, which are important and preferable components in monolithic 3-D (M3D) integration, on the electrical properties of MOSFETs, such as the threshold voltage (V T) and the effective mobility (μeff). It was found that V T and μeff were significantly modulated by the backsubstrate doping and the backbiasing. These observations were explained by the change of carrier distributions,which were confirmed by technology computer-aided design simulation. Furthermore, we investigated the reusability of InP donor substrates for sequential epitaxial growth after ELO process toward a cost-effective M3D integration with the In0.53Ga0.47As channel.
URI
http://pubs.kist.re.kr/handle/201004/67592
ISSN
0018-9383
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KIST Publication > Article
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