Impact of Ground Plane Doping and BottomGate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
- Impact of Ground Plane Doping and BottomGate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
- 최원준; 송진동; 김형준; 김상현; 심재필; 김성광; 김한성; 금대명; Jaewon Kim; Chang Zoo Kim; Sung Jin Choi; Dae Hwan Kim; Dong Myong Kim
- Issue Date
- IEEE transactions on electron devices
- VOL 65, NO 5-1868
- In this paper, we fabricated In0.53Ga0.47As-on insulator (OI) MOSFETs on Si substrates with different doping types to mimic ground plane doping using direct wafer bonding and epitaxial lift-off (ELO) techniques. We investigated the impact of doping types on the ground plane and the backgate biasing, which are important and preferable components in monolithic 3-D (M3D) integration, on the electrical properties of MOSFETs, such as the threshold voltage (V T) and the effective mobility (μeff). It was found that V T and μeff were significantly modulated by the backsubstrate doping and the backbiasing. These observations were explained by the change of carrier distributions,which were confirmed by technology computer-aided design simulation. Furthermore, we investigated the reusability of InP donor substrates for sequential epitaxial growth after ELO process toward a cost-effective M3D integration with the In0.53Ga0.47As channel.
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