Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu2ZnSn(S,Se)4 Thin Film Solar Cells

Title
Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu2ZnSn(S,Se)4 Thin Film Solar Cells
Authors
이도권서정우서세원김동환천기범김진영
Keywords
Al-/Ga-Doped ZnO; Codoping; Cu2ZnSn(S,Se)4; Thin Film, Solar Cell; Transparent Conducting Oxide
Issue Date
2018-09
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 18, NO 9-6441
Abstract
The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.
URI
http://pubs.kist.re.kr/handle/201004/67646
ISSN
1533-4880
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KIST Publication > Article
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