Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors

Title
Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors
Authors
이동수이승기전대영박민So Jeong ParkGyu-Tae Kim
Keywords
2-D transition-metal dichalcogenides; bulk channel mobility; maximum depletion width; partially depleted (PD); series resistance
Issue Date
2018-07
Publisher
IEEE transactions on electron devices
Citation
VOL 65, NO 7-3053
Abstract
Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (Dmax), and the impact of series resistance (Rsd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
URI
http://pubs.kist.re.kr/handle/201004/67743
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE