Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields

Title
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields
Authors
정승준박진수장연식변정환조경준김태영김재근최유리신지원홍용택이탁희
Issue Date
2018-07
Publisher
ACS Nano
Citation
VOL 12, NO 7-7116
Abstract
As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub-micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS2 field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS2 allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS2.
URI
http://pubs.kist.re.kr/handle/201004/67796
ISSN
1936-0851
Appears in Collections:
KIST Publication > Article
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