Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Title
Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors
Authors
전대영Do-Kywn KimSo Jeong ParkYumin KohChu-Young ChoGyu-Tae KimKyung-Ho Park
Keywords
AlGaN/GaN HEMTs; Effective mobility; Low-frequency noise and carrier number fluctuation; Mobility degradation factors; Series resistance
Issue Date
2018-11
Publisher
Microelectronic engineering
Citation
VOL 199, NO 5-44
Abstract
The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.
URI
http://pubs.kist.re.kr/handle/201004/67945
ISSN
0167-9317
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KIST Publication > Article
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