Bright single photon sources in lateral silicon carbide light emitting diodes
- Bright single photon sources in lateral silicon carbide light emitting diodes
- 이상윤; Matthias Widmann; Matthias Niethammer; Takahiro Makino; Torsten Rendler; Stefan Lasse; Takeshi Ohshima; Jawad Ul Hassan; Nguyen Tien Son; Joerg Wrachtrup
- Issue Date
- Applied physics letters
- VOL 112, NO 23-231103-5
- Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.