Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells
- Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells
- 이욱성; 김원목; 이택성; 김인호; 정증현; 정두석; 이현승; 정범식; 최지혜; 우정현; 김주영; 이규성; 최재영; 최두진
- co-diffusion of boron and phosphorus; ultra-thin Si solar cell; boron rich layer; critical bending radius
- Issue Date
- Journal of physics D, applied physics
- VOL 51, NO 27, 275101
- This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 mu m in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass postcuring process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (J(sc)) of 35.8 mA cm(-2), a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 mu m in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.
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