Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

Title
Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells
Authors
이욱성김원목이택성김인호정증현정두석이현승정범식최지혜우정현김주영이규성최재영최두진
Keywords
co-diffusion of boron and phosphorus; ultra-thin Si solar cell; boron rich layer; critical bending radius
Issue Date
2018-06
Publisher
Journal of physics D, applied physics
Citation
VOL 51, NO 27, 275101
Abstract
This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 mu m in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass postcuring process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (J(sc)) of 35.8 mA cm(-2), a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 mu m in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.
URI
http://pubs.kist.re.kr/handle/201004/68113
ISSN
0022-3727
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KIST Publication > Article
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