Exploration of Si-doped SnO2 composition and properties of oxide/Ag/oxide multilayers prepared using continuous composition spread by sputtering
- Exploration of Si-doped SnO2 composition and properties of oxide/Ag/oxide multilayers prepared using continuous composition spread by sputtering
- 최지원; 임해나; 장주희
- Transparent conducting oxides; Si-doped SnO2/Ag/Si-doped SnO2; Thin films; Electrical properties; Optical properties; Radio-frequency magnetron sputtering; Continuous composition spread
- Issue Date
- Thin solid films
- VOL 660-612
- Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated on flexible substrates at room temperature for indium free transparent conducting electrode. The optimal composition of Si-doped SnO2 was found by investigating electrical properties of various composition deposited by off-axis RF magnetron sputtering continuous composition spread method. Si-doped SnO2 thin films have low resistivity (0.07 Omega.cm) at doping content of Si (0.14 wt%). Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated using optimized composition deposited by on-axis RF and DC sputtering. The optimized Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin film has resistivity of 9.1x10(-5) Omega.cm and 81% transmittance in the visible region (550 nm).
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