Post-thermal-induced recrystallization in GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy with near-unity stoichiometry

Title
Post-thermal-induced recrystallization in GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy with near-unity stoichiometry
Authors
한일기송진동여인아Kyung Soo Yi이은혜Jong Su Kim
Keywords
recrystallization; quantum dots; droplet epitaxy; near-unity stoichiometry
Issue Date
2018-08
Publisher
ACS omega
Citation
VOL 3, NO 8-8682
Abstract
Here, we investigate the stoichiometry control of GaAs/Al0.3Ga0.7As droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown “strain-free” QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with wellcontrolled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects.
URI
http://pubs.kist.re.kr/handle/201004/68130
ISSN
2470-1343
Appears in Collections:
KIST Publication > Article
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