Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios

Title
Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios
Authors
김영환한일기Alexander EfremovJaemin LeeKwang-Ho KwonChangmok Kim
Keywords
Ion Assisted Etching; Inductively coupled plasma; Kinetics and mechanism
Issue Date
2018-08
Publisher
Thin solid films
Citation
VOL 660-595
Abstract
The study of InP etching kinetics as well as the evaluation of InP etching mechanism in HBr+Cl-2+Ar inductively coupled plasma were carried out. Experiments on the measurements of the etching rates for InP, SiO2, and SiNx as well as plasma diagnostics using Langmuir probes and optical emission spectroscopy were conducted at a fixed total gas pressure (10 mTorr, or 1.33 Pa), input power (800 W), and bias power (200 W), and the variable parameter was the HBr/Cl-2 mixing ratio. Zero-dimensional (global) plasma modeling provided data regarding the densities of the plasma active species as well as on the particle and energy fluxes to the etched surface. An increase in the Cl-2 fraction in the feed gas yielded a non-monotonic InP etching rate with a maximum of similar to 120 nm/min at 35% Cl-2. Model-based analysis of the InP etching kinetics revealed that 1) the InP etching process is mainly provided by the chemical etching pathway; 2) the non-monotonic change in the InP etching rate cannot be explained by the chemical effects of Br and Cl atoms; and 3) the HCl molecules may have sufficiently contributed to the chemical etching pathway.
URI
http://pubs.kist.re.kr/handle/201004/68137
ISSN
0040-6090
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KIST Publication > Article
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