Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing

Title
Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
Authors
이상윤Yuichi YamazakiYoji ChibaTakahiro MakinoShin-Ichiro SatoNaoto YamadaTakahiro SatohYasuto HijikataKazutoshi KojimaTakeshi Ohshima
Issue Date
2018-10
Publisher
Journal of materials research
Citation
VOL 33, NO 20-3361
Abstract
Single photon sources (SPS) are an important building block for realizing quantum technologies for computing, communication, and sensing. For industrialization, electrically controllable color centers acting as SPS are required. We have demonstrated the creation of electrically controllable silicon vacancies (VSis) in the SiC pn junction diode fabricated by proton beam writing (PBW). PBW was successfully used to introduce electrically controllable VSi without degradation of the diode performance. The dependence of the electroluminescence (EL) and photoluminescence (PL) intensities from VSi on H1 fluence revealed that the emission efficiency of EL is less than that of PL. For EL, the supply of carriers (electrons and/or holes) was restricted due to the resistive region around each VSi introduced by PBW. The results suggest that further improvement in the VSi creation process without defects acting as majority carrier removal centers (highly resistive region) and nonradiative centers by optimization of PBW conditions are key points to realize highly sensitive quantum sensors using VSi.
URI
http://pubs.kist.re.kr/handle/201004/68163
ISSN
0884-2914
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE