A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors
- A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors
- 김진상; 강종윤; 김성근; 편정준; 조철진; Doo Seok Jeong
- DRAM; capacitor; Ru-Pt electrode; rutile TiO2
- Issue Date
- VOL 29-455202-7
- Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru– Pt alloy electrode to increase the height of the Schottky barrier. The Ru– Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru– Pt layer containing „ 43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru– Pt (40– 50 at.%) layer also attained an increase in work function of ∼0.3– 0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru– Pt capacitor. These findings suggested that a Ru– Pt layer could serve as a promising electrode for next-generation DRAM capacitors.
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