GaAs droplet quantum dots with nanometerthin capping layer for plasmonic applications

Title
GaAs droplet quantum dots with nanometerthin capping layer for plasmonic applications
Authors
한일기송진동Suk In ParkOliver Joe TrojakEunhye LeeJihoon KyhmJongsu KimLuca SapienzaGyu-Chul Yi
Issue Date
2018-05
Publisher
Nanotechnology
Citation
VOL 29, NO 20, 205602
Abstract
We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
URI
http://pubs.kist.re.kr/handle/201004/68239
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE