GaAs droplet quantum dots with nanometerthin capping layer for plasmonic applications
- GaAs droplet quantum dots with nanometerthin capping layer for plasmonic applications
- 한일기; 송진동; Suk In Park; Oliver Joe Trojak; Eunhye Lee; Jihoon Kyhm; Jongsu Kim; Luca Sapienza; Gyu-Chul Yi
- Issue Date
- VOL 29, NO 20, 205602
- We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
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