Suppression of bulk conductivity and large phase relaxation length in topological insulator Bi2-δSnδTe3 epitaxial thin films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

Title
Suppression of bulk conductivity and large phase relaxation length in topological insulator Bi2-δSnδTe3 epitaxial thin films grown by Metal-Organic Chemical Vapor Deposition (MOCVD)
Authors
김진상정병기이수연김성근김광천조성원
Keywords
Topological insulator; bulk conductivity; phase relaxation length
Issue Date
2017-11
Publisher
Journal of alloys and compounds
Citation
VOL 723, 942
Abstract
A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its unique topology in band structure, has attracted much interest due to academic and practical importance. Nonetheless, a large contribution of the bulk conduction, induced by unintended doping by defects, has hindered the characterization of the surface state and the application of it into a device. To resolve this problem, we have investigated the transport properties of epitaxial Bi2-δSnδTe3 thin films with varying δ. With the bulk conduction being strongly suppressed, the TSS is separately characterized, resulting in a large phase relaxation length of ∼250 nm at 1.8 K. In addition, the magnetoresistance ratio (MR) has shown a non-monotonic temperature dependence with a maximum value at an elevated temperature depending on δ. These results are associated with the compensation of carriers and, we believe, provide an important step for the application of topological insulators for developing novel functional devices based on the topological surface states.
URI
http://pubs.kist.re.kr/handle/201004/68246
ISSN
0925-8388
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KIST Publication > Article
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