Direct Electrochemical Preparation of Nanostructured Silicon Carbide and Its Nitridation Behavior

Direct Electrochemical Preparation of Nanostructured Silicon Carbide and Its Nitridation Behavior
김지영D. Sri Maha VishnuJagadeesh Sure김현경R. Vasant KumarCarsten Schwandt
Issue Date
Journal of the Electrochemical Society
VOL 165, NO 14-D742
Silicon carbide was synthesized from mixtures of SiO2 and graphite by applying the concept of the FFC-Cambridge process and several fundamental aspects of the synthesis route were investigated. Porous disks composed of powders of SiO2 and graphite in molar ratios of 1:0.5, 1:1 and 1:1.5 were prepared by sintering in inert atmosphere and subjected to electro-deoxidation in molten CaCl2 at 1173 K under a range of experimental conditions. Disks of molar ratio 1:1.5, reduced at an applied voltage of 2.8 V for a duration of 6 h, yielded exclusively phase-pure SiC of nanowire morphology as the reaction product, while the other precursor compositions provided significant amounts of calcium silicides. Voltages lower than 2.8 V gave mixtures of SiC with elemental Si and graphite, and voltages higher than that gave CaSi alone. Shorter electro-deoxidation times led to incomplete reduction and allowed for the identification of CaSiO3 as a transient phase. Based on the experimental results a multipath reaction mechanism is proposed, consisting of the electrochemical reduction of SiO2 and CaSiO3 to Si and the subsequent in-situ carbonization of the Si formed to SiC. The effect of N-2 at high temperature on the electrochemically synthesized SiC was investigated and the formation of nanowire Si2N2O was observed. Overall, the process presented is a facile single-step and low-temperature method for the synthesis of SiC with possible commercial prospects.
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