Ultimate limit in size and performance of WSe2 vertical diodes

Title
Ultimate limit in size and performance of WSe2 vertical diodes
Authors
황준연이동수김경수Ghazanfar Nazir김학성김지환신동훈Muhammad Farooq Khan황찬용서준호엄종화정수용
Keywords
2D materials; Vertical diode; Schottky emission; p-i-n diode; current rectification
Issue Date
2018-12
Publisher
Nature Communications
Citation
VOL 9-5371-9
Abstract
Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with twodimensional layered materials. Here, we report tungsten diselenide- (WSe2) based pure vertical diodes with atomically defined p-, i- and n-channel regions. Externally modulated p- and n-doped layers are respectively formed on the bottom and the top facets of WSe2 single crystals by direct evaporations of high and low work-function metals platinum and gadolinium, thus forming atomically sharp p– i– n heterojunctions in the homogeneous WSe2 layers. As the number of layers increases, charge transport through the vertical WSe2 p– n heterojunctions is characterized by a series of quantum tunneling events; direct tunneling, Fowler– Nordheim tunneling, and Schottky emission tunneling. With optimally selected WSe2 thickness, our vertical heterojunctions show superb diode characteristics of an unprecedentedly high current density and low turn-on voltages while maintaining good current rectification.
URI
http://pubs.kist.re.kr/handle/201004/68887
ISSN
2041-1723
Appears in Collections:
KIST Publication > Article
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