Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer

Title
Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer
Authors
김수민이주송Stephen BoandohFrederick Osei-Tutu Agyapong-FordjourSoo Ho ChoiJi-Hoon ParkHayoung KoGyeongtak HanSeok Joon YunSehwan ParkYoung-Min KimWoochul YangYoung Hee LeeKi Kang Kim
Keywords
two-dimensional materials; van der Waals heterostructure; glass transition temperature; viscoelastic polymer support layer; conformal contact; ultraclean interface
Issue Date
2019-01
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 11, NO 1-1586
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature (T-g) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV.dec(-1) for the Tafel slope and 0.12 k Omega of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.
URI
http://pubs.kist.re.kr/handle/201004/68928
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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