Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer
- Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer
- 김수민; 이주송; Stephen Boandoh; Frederick Osei-Tutu Agyapong-Fordjour; Soo Ho Choi; Ji-Hoon Park; Hayoung Ko; Gyeongtak Han; Seok Joon Yun; Sehwan Park; Young-Min Kim; Woochul Yang; Young Hee Lee; Ki Kang Kim
- two-dimensional materials; van der Waals heterostructure; glass transition temperature; viscoelastic polymer support layer; conformal contact; ultraclean interface
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 11, NO 1-1586
- Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature (T-g) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV.dec(-1) for the Tafel slope and 0.12 k Omega of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.