Behavior of subthreshold conduction in junctionless transistors

Title
Behavior of subthreshold conduction in junctionless transistors
Authors
전대영So Jeong ParkLaurent MontesMireille MouisSylvain BarraudGyu-Tae KimGerard Ghibaudo
Keywords
Junctionless transistors (JLT); DIBL; Subthreshold conduction; Less effective barrier height; Subthreshold slope; Diffusion current
Issue Date
2016-10
Publisher
Solid-state electronics
Citation
VOL 124-63
Abstract
In this work, the effect of high channel doping concentration and unique structure of junctionless transistors (JLTs) is investigated in the subthreshold conduction regime. Both experimental results and simulation work show that JLTs have reduced portion of the diffusion conduction and lower effective barrier height between source/drain and the silicon channel in subthreshold regime, compared to conventional inversion-mode (IM) transistors. Finally, it leads to a relatively large DIBL value in JLTs, owing to degraded gate controllability on channel region and strong drain bias effect. However, JLTs showed a better immunity against short channel effect in terms of degradation of the effective barrier height value.
URI
http://pubs.kist.re.kr/handle/201004/69022
ISSN
0038-1101
Appears in Collections:
KIST Publication > Article
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