Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors

Title
Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors
Authors
전대영So Jeong ParkGyu-Tae Kim
Keywords
Fin cross-section shape; Junctionless transistor; 2D numerical simulation; Channel doping concentration
Issue Date
2019-02
Publisher
Microelectronic engineering
Citation
VOL 207-54
Abstract
The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration.
URI
http://pubs.kist.re.kr/handle/201004/69051
ISSN
0167-9317
Appears in Collections:
KIST Publication > Article
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