Characteristics of band modulation FET on sub 10nm SOI

Title
Characteristics of band modulation FET on sub 10nm SOI
Authors
김용태권세현Carlos NavarroFrancisco GamizSorin CirstoloveanuPhileppe GalyMinho ChoiJinho Ahn
Keywords
band modulation; 1T DRAM; Steep swing slope; Memory window; Current margin
Issue Date
2019-02
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 58, NO SB-SBBB07-7
Abstract
The electrical characteristics of band modulation FET are investigated with energy band diagrams between drain to source through intrinsic gate region according to front/back gates and drain bias conditions. The drain current– voltage and transfer characteristics show extremely steep slope with minimum subthreshold swing of 1.6 mV/decade. Memory window is 0.27 V, which is determined with turn on voltages at “0” and “1” states through multiple cycles of write and read operations. Memory performance also shows that current margin to distinguish the “0” and “1” state has the maximum value of over 100 μA at VD of 1.2 V. But, the current margin is relatively less affected by the front and back gate bias under the conditions that VD is applied in the memory window range and the current at “0” state remains low.
URI
http://pubs.kist.re.kr/handle/201004/69088
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
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