1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Title
1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
Authors
정대환Jianan DuanHeming HuangBozhang DongJustin C. NormanJohn E. BowersFrederic Grillot
Keywords
Quantum dot; reflection sensitivity
Issue Date
2019-03
Publisher
IEEE photonics technology letters
Citation
VOL 31, NO 5-348
Abstract
This letter reports on a 1.3-μm reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with − 7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.
URI
http://pubs.kist.re.kr/handle/201004/69093
ISSN
1041-1135
Appears in Collections:
KIST Publication > Article
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