Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus
- Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus
- 정대환; Chen Chen; Feng Chen; Bingchen Deng; Brendan Eng; Qiushi Guo; Shaofan Yuan; Kenji Watanabe; Takashi Taniguchi; Minjoo L. Lee; Fengnian Xia; Xiaolong Chen
- Issue Date
- Nano letters
- VOL 19, NO 3-1493
- Recently rediscovered layered black phosphorus (BP) provides rich opportunities for investigations of device physics and applications. The band gap of BP is widely tunable by its layer number and a vertical electric field, covering a wide electromagnetic spectral range from visible to
mid-infrared. Despite much progress in BP optoelectronics, the fundamental photoluminescence (PL) properties of thinfilm BP in mid-infrared have rarely been investigated. Here, we report bright PL emission from thin-film BP (with thickness of 4.5 to 46 nm) from 80 to 300 K. The PL measurements indicate a band gap of 0.308 ± 0.003 eV in 46 nm thick BP at 80 K, and it increases monotonically to 0.334 ± 0.003 eV at 300 K. Such an anomalous blueshift agrees with the previous theoretical and photoconductivity spectroscopy results. However, the observed blueshift of 26 meV from 80 to 300 K is about 60% of the previously reported value. Most importantly, we show that the PL emission intensity from thin-film BP is only a few times weaker than that of an indium arsenide (InAs) multiple quantum well (MQW) structure grown by molecular beam epitaxy. Finally, we report the thickness-dependent PL spectra in thin-film BP in mid-infrared regime. Our work reveals the mid-infrared light emission properties of thin-film BP, suggesting its promising future in tunable mid-infrared light emitting and lasing applications.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.