Enhanced Charge Injection Properties of Organic Field­Effect Transistor by Molecular Implantation Doping

Title
Enhanced Charge Injection Properties of Organic Field­Effect Transistor by Molecular Implantation Doping
Authors
정승준김영록조경준David Harkin황왕택유대경김재근이우철송영걸안희범홍용택Henning Sirringhaus강기훈이탁희
Issue Date
2019-03
Publisher
Advanced materials
Citation
VOL 31, NO 10, 1806697
Abstract
Organic semiconductors (OSCs) have been widely studied due to their merits such as mechanical flexibility, solution processability, and large-area fabrication. However, OSC devices still have to overcome contact resistance issues for better performances. Because of the Schottky contact at the metal– OSC interfaces, a non-ideal transfer curve feature often appears in the low-drain voltage region. To improve the contact properties of OSCs, there have been several methods reported, including interface treatment by self-assembled monolayers and introducing charge injection layers. Here, a selective contact doping of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) by solid-state diffusion in poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno [3,2-b]thiophene) (PBTTT) to enhance carrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated. Furthermore, the effect of post-doping treatment on diffusion of F4-TCNQ molecules in order to improve the device stability is investigated. In addition, the application of the doping technique to the low-voltage operation of PBTTT OFETs with high-k gate dielectrics demonstrated a potential for designing scalable and lowpower organic devices by utilizing doping of conjugated polymers.
URI
http://pubs.kist.re.kr/handle/201004/69096
ISSN
0935-9648
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