Enhanced Critical Current Density in the Carbon-Ion Irradiated MgB2 Thin Films
- Enhanced Critical Current Density in the Carbon-Ion Irradiated MgB2 Thin Films
- 송종한; 임원철; 정순길; 손승규; 듀옹 팜; 강원남; 박두순
- Issue Date
- Journal of the Physical Society of Japan
- VOL 88-034716-6
- We report large improvement of the critical current density (Jc) of 400-nm-thick MgB2 thin films through carbon (C) ion irradiation. When 350 keV C ions with various dose levels ranging from 1 × 1013– 1 × 1015C atoms=cm2 are irradiated into the films, the c-axis lattice constant gradually expands with increase in the number of irradiated C ions and superconducting transition temperature (Tc) of the MgB2 films is suppressed. On the other hand, the field performance of Jc for the MgB2 films remarkably improves after irradiations, which is accompanied by the crossover of the pinning mechanism from weak collective to strong pinning. In addition, scaling behavior of flux pinning force for irradiated MgB2 films shows a dominance of normal point pinning, indicating that the improved field performance of Jc mainly originates from the point defects, such as vacancies and interstitials, created by C-ion irradiation. Our results
suggest that carbon acts as an effective irradiating source as well as a doping source to improve Jc in high magnetic fields.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.