Role of the short-range order in amorphous oxide on MoS2/a-SiO2 and MoS2/a-HfO2 interfaces

Title
Role of the short-range order in amorphous oxide on MoS2/a-SiO2 and MoS2/a-HfO2 interfaces
Authors
최정혜박재홍여인원한규승황철성
Keywords
amorphous oxides; effective mass; interfacial atomic structur; molybdenum disulfide; MoS2/a-SiO2; MoS2/a-HfO2; short-range order
Issue Date
2019-08
Publisher
Physica Status Solidi. B, Basic Solid State Physics
Citation
VOL 256, NO 8-1900002-5
Abstract
Influence of Cr on the electronic properties of float‐ zone n‐ Si containing dislocations and NV defects are investigated by deep level transient spectroscopy (DLTS) and light beam induced current (LBIC). In samples quenched after Cr in‐ diffusion, a very broad DLTS band appears and the electron– hole relaxation rate increases dramatically. Results are explained by the formation of Cr related nano‐ precipitates stimulated by dislocations and nitrogen– vacancy defects.
URI
http://pubs.kist.re.kr/handle/201004/69202
ISSN
0370-1972
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KIST Publication > Article
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