Low­loss aluminium nitride thin film for mid­infrared microphotonics

Title
Low­loss aluminium nitride thin film for mid­infrared microphotonics
Authors
정호중Pao Tai LinLionel C. KimerlingAnu AgarwalHong X. Tang
Issue Date
2014-03
Publisher
Laser & photonics review
Citation
VOL 8, NO 2-L28
Abstract
Mid-infrared (mid-IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y-junction beam splitters are developed on thin films of CMOS-compatible sputter deposited aluminum nitride (AlN)-on-silicon. An optical loss of 0.83 dB/cm at = 2.5 mu m is achieved. In addition, an efficient mid-IR 50:50 beam splitter is demonstrated over 200nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra-wide transparent window (ultraviolent to mid-IR), our AlN mid-IR platform can enable broadband optical networks on a chip.
URI
http://pubs.kist.re.kr/handle/201004/69272
ISSN
1863-8880
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KIST Publication > Article
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