Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Title
Deuterated silicon nitride photonic devices for broadband optical frequency comb generation
Authors
정호중Jeff ChilesNima NaderDaniel D. HicksteinSu Peng YuTravis Crain BrilesDavid CarlsonJeffrey M. ShainlineScott DiddamsScott B. PappSae Woo NamRichard P. Mirin
Issue Date
2018-04
Publisher
Optics letters
Citation
VOL 43, NO 7-1530
Abstract
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300 degrees C, it is back-end compatible with complementary metal-oxide semiconductor substrates. We achieve microresonators with a quality factor of up to 1.6 x 10(6) at 1552 nm and >1.2 x 10(6) throughout lambda = 1510-1600 nm, without annealing or stress management (film thickness of 920 nm). We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free-spectral-range, 900 nm bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.
URI
http://pubs.kist.re.kr/handle/201004/69279
ISSN
0146-9592
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KIST Publication > Article
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