Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power

Title
Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power
Authors
김용태권세현CARLOS NAVARROCARLOS MARQUEZSANTIAGO NAVARROCARMEN LOZANOFRANCISCO GAMIZ
Keywords
Capacitorless 1T DRAM; FD-SOI; Germanium; memory; low power; single supply; Z2FET; TCAD
Issue Date
2019-02
Publisher
IEEE transactions on electron devices
Citation
VOL 7-40284
Abstract
With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z2-FET (zero subthreshold swings, zero impact ionization eld-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells.
URI
http://pubs.kist.re.kr/handle/201004/69303
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
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