High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Title
High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
Authors
이상윤Roland NagyMatthias NiethammerMatthias WidmannYu-Chen ChenPeter UdvarhelyiCristian BonatoJawad Ul HassanRobin KarhuIvan G. IvanovNguyen Tien SonJeronimo R. MazeTakeshi OhshimaOney O. SoykalAdam GaliFlorian KaiserJorg Wrachtrup
Issue Date
2019-04
Publisher
Nature Communications
Citation
VOL 10-1954-8
Abstract
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin– optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron– phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1  kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
URI
http://pubs.kist.re.kr/handle/201004/69381
ISSN
2041-1723
Appears in Collections:
KIST Publication > Article
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