High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
- High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
- 이상윤; Roland Nagy; Matthias Niethammer; Matthias Widmann; Yu-Chen Chen; Peter Udvarhelyi; Cristian Bonato; Jawad Ul Hassan; Robin Karhu; Ivan G. Ivanov; Nguyen Tien Son; Jeronimo R. Maze; Takeshi Ohshima; Oney O. Soykal; Adam Gali; Florian Kaiser; Jorg Wrachtrup
- Issue Date
- Nature Communications
- VOL 10-1954-8
- Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin– optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron– phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1  kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
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