Field Effect Transistors Based on One-Dimensional, Metal-Oxide Semiconducting Nanofiber Mats
- Field Effect Transistors Based on One-Dimensional, Metal-Oxide Semiconducting Nanofiber Mats
- 황도경; 유태희
- Metal-oxide semiconductor; Nanober mats; Field effect transistor; Electrospinning
- Issue Date
- Journal of the Korean Physical Society
- VOL 74-830
- Metal-oxide semiconductors are very promising alternatives to amorphous and polycrystalline Si semiconductors. In addition to thin-lm metal-oxide semiconductors, nanostructured metal-oxide semiconductors have also attracted considerable attention due to their interesting physical properties for versatile potential applications. Here, we report on metal-oxide semiconducting (InZnO and HfInZnO) nanober mats prepared by electrospinning. Thermal gravimetric analyses (TGA) and X-ray diffraction (XRD) measurements were carried out so as to investigate the phase transition from as-spun metal precursor/polymer matrix composite nanobers mats to metal-oxide nanober mats. We fabricated eld effect transistor (FETs) based on InZnO and HfInZnO nanober mats, and both FETs showed proper n-type transfer and output characteristics. FETs based on InZnO nanober mats-based FETs exhibited superior device performance: negligible hysteresis, a decent electron mobility of 5.49 cm2/Vs, and a good on/off current ratio of 107.
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