Linewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications

Title
Linewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications
Authors
정대환Zeyu ZhangJustin C. NormanWeng W. ChowJohn E. Bowers
Issue Date
2019-11
Publisher
IEEE journal on selected topics in quantum electronics
Citation
VOL 25, NO 6-1900509-9
Abstract
The linewidth enhancement factor ( H) is an important parameter for semiconductor lasers. In this work, we investigate, both theoretically and experimentally, the key parameters that affect H of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small H in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed.
URI
http://pubs.kist.re.kr/handle/201004/69394
ISSN
1077-260X
Appears in Collections:
KIST Publication > Article
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