Infuence of interface defects on the optical properties of InP/ZnS quantum dots by low temperature synthesis of InP core
- Infuence of interface defects on the optical properties of InP/ZnS quantum dots by low temperature synthesis of InP core
- 변영태; 정다운; 서한욱; 임경목; 전은주; 김범성
- Quantum dots; QDs; InP; InP/ZnS; Surface defects
- Issue Date
- Applied surface science
- VOL 476-760
- We present a series of investigations focused on the effect of synthesis temperature on the optical characteristics of InP/ZnS QDs. Absorption spectra confirmed the successful synthesis of InP QDs under a temperature as low as 140  °C. Because of the poor optical characteristics possibly caused by the inherently high defect states on the surface of InP QDs, a modified ZnS shell overcoating was applied on the InP QDs. An InP core synthesized at a relatively low temperature of 160  °C or less is presumed to possess fewer surface defects; this was confirmed as a reduction in the red-shift due to the shell coating. A satisfactory quantum yield of 52% was obtained from the InP/ZnS QDs synthesized at a reaction temperature and reaction time of 140  °C and 20  h, respectively, with the ZnS shell coating. Thus, we successfully synthesized InP/ZnS QDs using an InP core synthesized at a low temperature of 140  °C through our suggested shell coating process.
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