Material design of Ge2Sb2Te5 phase change material with thermal stability and lattice distortion

Title
Material design of Ge2Sb2Te5 phase change material with thermal stability and lattice distortion
Authors
김용태Minho ChoiHeechae ChoiJinho Ahn
Keywords
PCRAM; Memory; GST; switching speed; Material design; Lattice distortion
Issue Date
2019-09
Publisher
Scripta materialia
Citation
VOL 170-19
Abstract
To overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness.
URI
http://pubs.kist.re.kr/handle/201004/69464
ISSN
1359-6462
Appears in Collections:
KIST Publication > Article
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