Physical origin of the optical degradation of InAs quantum dot lasers

Title
Physical origin of the optical degradation of InAs quantum dot lasers
Authors
정대환Matteo BuffoloFabio SamparisiCarlo De SantiJustin NormanJohn BowersRobert HerrickGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini
Issue Date
2019-06
Publisher
IEEE journal of quantum electronics
Citation
VOL 55, NO 3-2000607-7
Abstract
We present an extensive analysis of the physical mechanisms responsible for the degradation of 1.3-µ m InAs quantum dot lasers epitaxially grown on Si, for application in silicon photonics. For the first time, we characterize the degradation of the devices by combined electro-optical measurements, electroluminescence spectra, and current-voltage analysis. We demonstrate the following original results: when submitted to a current step-stress experiment: 1) QD lasers show a measurable increase in threshold current, which is correlated to a decrease in slope efficiency; 2) the degradation process is stronger, when devices are stressed at current higher than 200 mA, i.e., in the stress regime, where both ground-state and excited-state emission are present; and 3) in the same range of stress currents, an increase in the defect-related current components is also detected, along with a slight decrease in the series resistance. Based on the experimental evidence collected within this paper, the degradation of QD lasers is ascribed to a recombination-enhanced defect reaction (REDR) process, activated by the escape of electrons out of the quantum dots.
URI
http://pubs.kist.re.kr/handle/201004/69497
ISSN
0018-9197
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KIST Publication > Article
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