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dc.contributor.author최원준-
dc.contributor.author송진동-
dc.contributor.author김형준-
dc.contributor.author한재훈-
dc.contributor.author김상현-
dc.date.accessioned2021-06-09T04:22:21Z-
dc.date.available2021-06-09T04:22:21Z-
dc.date.issued2019-01-
dc.identifier.citationVOL 74, NO 2-87-
dc.identifier.issn0374-4884-
dc.identifier.other52897-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/69537-
dc.description.abstractRecently, heterogeneous integration has become more important in enhancing device performance and creating new functions. For this purpose, wafer bonding can provide a straightforward method to integrate different materials, regardless of lattice mismatch. Here, we review recent application spaces using low-temperature wafer bonding by classifying wafer bonding into direct bonding, oxide bonding, and metal bonding. We show that bonding materials and interfaces have an important role in achieving high-performance semiconductor devices.-
dc.publisherJournal of the Korean Physical Society-
dc.subjectWafer bonding-
dc.subjectHeterogeneous integration-
dc.subjectBonding interface-
dc.subjectMonolithic 3D integration-
dc.titleFunctionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications-
dc.typeArticle-
dc.relation.page8287-
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