Gate-Tunable and Programmable n?InGaAs/Black Phosphorus Heterojunction Diodes

Title
Gate-Tunable and Programmable n?InGaAs/Black Phosphorus Heterojunction Diodes
Authors
김형준이영수엄두승임성동이호찬김민수Tzu-Yi YangYu-Lun Chueh고현협
Keywords
heterojunction; multifunctional devices; black phosphorus; III?V compound semiconductor; nanomembrane
Issue Date
2019-07
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 11-23391
Abstract
Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III– V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III– V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.
URI
http://pubs.kist.re.kr/handle/201004/69582
ISSN
1944-8244
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KIST Publication > Article
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