A first-principles study of the structural and electronic properties of the epitaxial Ge(1?1?1)/La2O3(0?0?1) heterostructure

Title
A first-principles study of the structural and electronic properties of the epitaxial Ge(1?1?1)/La2O3(0?0?1) heterostructure
Authors
최정혜고은정류카이황철성
Keywords
epitaxial Ge(1 1 1)/La2O3(0 0 1) heterostructure; interface atomic configuration; structural properties; electronic properties; first-principles study
Issue Date
2019-07
Publisher
Journal of physics D, applied physics
Citation
VOL 52, NO 36-365101-7
Abstract
The effects of the atomic configuration of the epitaxial Ge(1 1 1)/La2O3(0 0 1) interface on the electrical properties of the structure were studied using first-principles calculations. The interface stability of this heterostructure is susceptible to the atomic configuration of the interface. The Ge– O-bonded interface without interfacial gap states is generally more stable than the Ge– La-bonded interface, which involves interfacial gap states. The band alignment is affected by the charge transfer depending on the interface atomic configuration, and the band bending across the La2O3 region was observed due to the electronic dipole inside the La2O3.
URI
http://pubs.kist.re.kr/handle/201004/69599
ISSN
0022-3727
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE