III-V on silicon avalanche photodiodes by heteroepitaxy

Title
III-V on silicon avalanche photodiodes by heteroepitaxy
Authors
정대환Yuan YuanKeye SunJiyuan ZhengAndrew H. JonesJohn E. BowersJoe C. Campbell
Issue Date
2019-07
Publisher
Optics letters
Citation
VOL 44, NO 14-3541
Abstract
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k∼0.2, as InAlAs APDs on InP.
URI
http://pubs.kist.re.kr/handle/201004/69612
ISSN
0146-9592
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE