Effect of Al2O3 Passivation on Electrical Properties of β-Ga2O3 Field-Effect Transistor

Title
Effect of Al2O3 Passivation on Electrical Properties of β-Ga2O3 Field-Effect Transistor
Authors
이억재JIYEON MAGEONWOOK YOO
Keywords
Ga2O3; Field Effect Transistor
Issue Date
2019-05
Publisher
IEEE Journal of the Electron Devices Society
Citation
VOL 7-516
Abstract
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β-Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high-quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate β-Ga2O3 FET and its device applications.
URI
http://pubs.kist.re.kr/handle/201004/69842
ISSN
2168-6734
Appears in Collections:
KIST Publication > Article
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