Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

Title
Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Authors
송진동김형준한재훈김한성김상현김성광신상훈금대명심재필이수빈주건우M. A. ALAM
Keywords
InGaAs MOSFETs; InGaAs-OI; monolithic 3D; self-heating; Ni-InGaAs
Issue Date
2019-08
Publisher
IEEE Journal of the Electron Devices Society
Citation
VOL 7-877
Abstract
30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.; Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%&#8211
URI
http://pubs.kist.re.kr/handle/201004/69864
ISSN
2168-6734
Appears in Collections:
KIST Publication > Article
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