Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
- Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
- 송진동; 김형준; 한재훈; 김한성; 김상현; 김성광; 신상훈; 금대명; 심재필; 이수빈; 주건우; M. A. ALAM
- InGaAs MOSFETs; InGaAs-OI; monolithic 3D; self-heating; Ni-InGaAs
- Issue Date
- IEEE Journal of the Electron Devices Society
- VOL 7-877
- 30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.; Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%–
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.