Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode

Title
Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode
Authors
송진동김형준황도경한재훈김한성임형락김성광금대명김상현
Keywords
MOS interface; InGaAs FET; gate electrode
Issue Date
2019-09
Publisher
Applied physics letters
Citation
VOL 115, NO 14-143502-4
URI
http://pubs.kist.re.kr/handle/201004/69988
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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