All-solution-processed Si films with broadband and omnidirectional light absorption

Title
All-solution-processed Si films with broadband and omnidirectional light absorption
Authors
한준수박용국안효성이규태김지현남민우조준희김선경고두현
Issue Date
2019-07
Publisher
Nanotechnology
Citation
VOL 30, NO 40-405202-8
Abstract
Silicon photonic structures have attracted a great deal of attention due to their potential benefits of efficient light management in optoelectronic applications. In this paper, we demonstrate broadband optical absorption enhancement in solution-processed amorphous silicon (a-Si) by leveraging the advantages of silicon photonic structures. Graded refractive index silicon multilayer structures are employed by modulating optical constants with simple process optimization, resulting in significantly improved reflectance over a broad range of visible wavelengths. In addition, nanopatterning flexibility of solution-processed silicon provides benefits for tailoring silicon optical properties. With the incorporation of the two-dimensional submicron pattern into silicon films, the absorptivity of silicon films improves considerably below the wavelength of the bandgap (λ ∼ 800 nm), and the limited bandwidth of absorptivity in silicon films can be extended to near-infrared wavelengths by coating with a thin gold layer. The methodology is generally applicable to a platform for improving the broadband optical absorption of photonic and optoelectronic devices.
URI
http://pubs.kist.re.kr/handle/201004/69994
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE