Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

Title
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
Authors
정대환Matteo BuffoloFabio SamparisiLorenzo RovereCarlo De SantiJustin NormanJohn BowersRobert HerrickGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini
Issue Date
2019-03
Publisher
IEEE journal on selected topics in quantum electronics
Citation
VOL 26, NO 2-1900208-8
Abstract
This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold curre t, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesiswas also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process.
URI
http://pubs.kist.re.kr/handle/201004/70004
ISSN
1077-260X
Appears in Collections:
KIST Publication > Article
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