High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate

Title
High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate
Authors
정대환Songtao LiuJustin NormanMario DumontAlfredo TorresArthur C. GossardJohn E. Bowers
Issue Date
2019-10
Publisher
ACS photonics
Citation
VOL 6, NO 10-2529
Abstract
High gain and high saturation output power silicon-based semiconductor optical amplifiers (SOAs) are essential elements in future largescale silicon photonic integrated circuits (PICs) to compensate for the excess power penalties that are introduced by large numbers of passive components. We present here, for the first time, to the best of our knowledge, an O-band quantum-dot (QD) SOA that is directly grown on a complementary metaloxide- semiconductor compatible on-axis (001) silicon substrate. The QD-SOA demonstrates a > 100 nm gain bandwidth with an on-chip gain larger than 20 dB at 20 °C. A gain maxima of 39 dB occurs at the ground state peak wavelength with a 23 dBm saturation output power. P-modulation doping in the dot spacer layers is important to achieve higher gains (>20 dB) at high temperature (70 °C) with a 21 nm bandwidth. A fiber-to-fiber noise figure as low as 6.1 dB and a wall plug efficiency as high as 19.7% are also shown. The performance shows that the Si-based QD-SOAs can be important for Si PICs and employed under uncooled scenarios.
URI
http://pubs.kist.re.kr/handle/201004/70005
ISSN
2330-4022
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE