InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Title
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K
Authors
최원준박민철송진동김상현현혜영곽기성심철휘강지훈강수석금대명Suk-Ho Choi
Keywords
InAs; GaAs; Metamorphic; IR sensor
Issue Date
2019-09
Publisher
Scientific Reports
Citation
VOL 9-12875-8
Abstract
Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1– 3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick InxAl1− xAs graded and AlAs buffer layers between the InAs layer and the GaAs substrate. At room temperature, the fabricated InAs photodetector operated in an infrared range of approximately 1.5– 4 μm and its detectivity (D*) was 1.65 × 108 cm · Hz1/2 · W− 1 at 3.3 μm. To demonstrate performance, the Sherlock Holmes mapping images were obtained using the photodetector at room temperature.
URI
http://pubs.kist.re.kr/handle/201004/70037
ISSN
2045-2322
Appears in Collections:
KIST Publication > Article
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